Investigation of consequent process-induced stress for N-type metal oxide semiconductor field effect transistor with a sunken shallow trench isolation pattern-Reference-Cited by-同舟云学术

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Investigation of consequent process-induced stress for N-type metal oxide semiconductor field effect transistor with a sunken shallow trench isolation pattern

Published:2014-04 Issue: Volume:557 Page:323-328
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Lee Chang-Chun,Liu Chuan-Hsi,Deng Rong Hao,Hsu Hung-Wen,Chiang Kuo-Ning

Funder

National Center for High-performance Computing

National Science Council of Taiwan, ROC

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference24 articles.

1. Establishing Moore's Law

2. A 90-nm Logic Technology Featuring Strained-Silicon

3. Method for Managing the Stress Due to the Strained Nitride Capping Layer in MOS Transistors

4. Comparative study of phonon‐limited mobility of two‐dimensional electrons in strained and unstrained Si metal–oxide–semiconductor field‐effect transistors

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Comprehensive Stress Effect of Thin Coatings and Silicon–Carbon Lattice Mismatch on Nano-Scaled Transistors with Protruding Poly Gate;Journal of Nanoscience and Nanotechnology;2020-02-01

2. Shallow trench isolation geometric influence of a recessed surface on array-type arrangements of nano-scaled devices strained by contact etch stop liner and Ge-based stressors;Thin Solid Films;2016-11

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