Light emitting diodes with InAs/GaAsSb self-assembled quantum dot layer embedded in GaAs
Author:
Funder
Czech Science Foundation
Institute of Physics
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials
Reference22 articles.
1. Semiconductor Nanostructures;Bimberg,2008
2. A 1.33 µm InAs/GaAs quantum dot laser with a 46 cm−1modal gain
3. Wide-temperature-range 10.3 Gbit/s operations of 1.3 [micro sign]m high-density quantum-dot DFB lasers
4. Interplay between Thermodynamics and Kinetics in the Capping ofInAs/GaAs(001)Quantum Dots
5. Pseudomorphic and Metamorphic Quantum Dot Heterostructures for Long-Wavelength Lasers on GaAs and Si
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