Enhancing the crystallization fraction performance of nano-crystalline silicon thin films with argon and hydrogen annealing-Reference-Cited by-同舟云学术

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Enhancing the crystallization fraction performance of nano-crystalline silicon thin films with argon and hydrogen annealing

Published:2007-02 Issue:7-8 Volume:515 Page:3844-3846
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Chen S.F.,Fang Y.K.,Lee T.H.,Lin C.Y.,Lin P.J.,Chang S.H.,Chou T.H.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference10 articles.

1. Stability of hydrogenated nanocrystalline silicon thin-film transistors

2. Growth of nanocrystalline silicon thin film with layer-by-layer technique for fast photo-detecting applications

3. Complete microcrystallinep‐i‐nsolar cell—Crystalline or amorphous cell behavior?

4. New approaches for the production of nano‐, micro‐, and polycrystalline silicon thin films

5. Contribution of plasma generated nanocrystals to the growth of microcrystalline silicon thin films

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. AC electrical properties of Schottky diode based on nanocrystalline silicon thin films;Physica B: Condensed Matter;2020-05

2. Annealing effects on physical properties of a Au/a-Si:H Schottky diode prepared via the plasma-enhanced chemical vapor deposition technique;Journal of Physics and Chemistry of Solids;2019-09

3. SiH4 enhanced dissociation via argon plasma assistance for hydrogenated microcrystalline silicon thin-film deposition and application in tandem solar cells;Solar Energy Materials and Solar Cells;2018-06

4. Fabrication and Characteristics of the Nano-Polysilicon Thin Film Transistors;Key Engineering Materials;2013-07

5. Influence of Argon Flow on Deposition of Hydrogenated Nanocrystalline Silicon (nc-Si:H) Films by Plasma Chemical Vapor Deposition;Journal of Nano Research;2009-02

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