Comparison of O2 plasma treatment on porous low dielectric constant material at sidewall and bottom of trench structure-Reference-Cited by-同舟云学术

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Comparison of O2 plasma treatment on porous low dielectric constant material at sidewall and bottom of trench structure

Published:2018-08 Issue: Volume:660 Page:808-813
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Cheng Yi-Lung,Lin Bing-Hong,Lee Chih-Yen,Chen Giin-Shan,Fang Jau-Shiung

Funder

Ministry of Science and Technology of the Republic of China

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference25 articles.

1. The International Technology Roadmap for Semiconductor, ITRS 2015.

2. Porous pSiCOH ultralow-k dielectrics for chip interconnects prepared by PECVD;Grill;Annu. Rev. Mater. Res.,2009

3. Plasma enhanced chemical vapor deposited SiCOH dielectrics: from low-k to extreme low-k interconnect materials;Grill;J. Appl. Phys.,2003

4. Ultraviolet irradiation effect on the properties of leakage current and dielectric breakdown of low-dielectric-constant SiOC(H) films using comb capacitor structure;Kim;Thin Solid Films,2011

5. Mechanical properties of a plasma-modified porous low-k material;Broussous;Microelectron. Eng.,2010

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