Characteristics and mechanism of phase change material W0.03Sb2Te etched by Cl2/BCl3 inductively coupled plasmas

Author:

Shen Lanlan,Song Sannian,Zhang Zhonghua,Song Zhitang,Cheng Yan,Zhu Yueqin,Guo Xiaohui,Yin Weijun,Yao Dongning,Liu Bo,Feng Songlin

Funder

Chinese Academy of Sciences

National Key Basic Research Program of China

National Integrate Circuit Research Program of China

National Natural Science Foundation of China

Science and Technology Commission of Shanghai Municipality

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference9 articles.

1. Recent progress of phase change memory (PCM) and resistive switching random access memory (RRAM);Wong,2010

2. Phase change materials for electronic memories;Atwood;Science,2008

3. Toward the ultimate limit of phase change in Ge2Sb2Te5;Simpson;Nano Lett.,2010

4. W–Sb–Te phase-change material: a candidate for the trade-off between programming speed and data retention;Peng;Appl. Phys. Lett.,2012

5. The dry etching characteristics of HfAlO3 thin films in CF4/Cl2/Ar inductively coupled plasma;Woo;J. Electrochem. Soc.,2012

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