Sn doped GaSb grown by liquid phase epitaxy-Reference-Cited by-同舟云学术

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Sn doped GaSb grown by liquid phase epitaxy

Published:2013-12 Issue: Volume:548 Page:168-170
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Compeán-Jasso V.H.,de Anda F.,Mishurnyi V.A.,Gorbatchev A.Yu.,Prutskij T.,Kudriavtsev Yu.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference15 articles.

1. Solar Cells in Photovoltaic and photoactive materials: properties, technology, and applications;Andreev,2002

2. GaSb photovoltaic cells for applications in TPV generators

3. The physics and technology of gallium antimonide: An emerging optoelectronic material

4. CP890 Thermophotovoltaic Generation of Electricity Seventh Conference;Lazzari,2007

5. A thermodynamic analysis of native point defect and dopant solubilities in zinc-blende III–V semiconductors

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1. Bayesian optimization-driven enhancement of the thermoelectric properties of polycrystalline III-V semiconductor thin films;NPG Asia Materials;2024-03-29

2. Ultrahigh Hole Mobility of Sn-Catalyzed GaSb Nanowires for High Speed Infrared Photodetectors;Nano Letters;2019-08-02

3. Epitaxial Crystal Growth: Methods and Materials;Springer Handbook of Electronic and Photonic Materials;2017

4. Polarity and growth directions in Sn-seeded GaSb nanowires;Nanoscale;2017

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