Nonalloyed transparent ohmic contact of indium tin oxide to p-type Si0.8Ge0.2-Reference-Cited by-同舟云学术

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Nonalloyed transparent ohmic contact of indium tin oxide to p-type Si0.8Ge0.2

Published:2005-12 Issue:1-2 Volume:493 Page:203-206
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Hwang J.D.,Chang W.T.,Hseih K.H.,Yang G.H.,Wu C.Y.,Chen P.S.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference21 articles.

1. Silicide/strained Si/sub 1-x/Ge/sub x/ Schottky-barrier infrared detectors

2. Tunable, long‐wavelength PtSi/SiGe/Si Schottky diode infrared detectors

3. Room temperature electroabsorption in a Ge/sub x/Si/sub 1-x/ PIN photodiode

4. Room temperature photocurrent spectroscopy of SiGe/Si p-i-n photodiodes grown by selective epitaxy

5. SiGe/Si heterojunction internal photoemission long-wavelength infrared detectors fabricated by molecular beam epitaxy

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Induced transition from Schottky to ohmic contact in In/n-type Si owing to (NH4)2Sx treatment;Indian Journal of Physics;2022-01-17

2. Improving the Performance of SiGe Metal–Semiconductor–Metal Photodetectors by Using an Amorphous Silicon Passivation Layer;IEEE Electron Device Letters;2007-12

3. High Photo-to-Dark-Current Ratio in SiGe/Si Schottky-Barrier Photodetectors by Using an a-Si:H Cap Layer;IEEE Transactions on Electron Devices;2007-09

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