Excimer laser thermal processing of ultra-shallow junction: laser pulse duration-Reference-Cited by-同舟云学术

Excimer laser thermal processing of ultra-shallow junction: laser pulse duration

Published:2004-04 Issue: Volume:453-454 Page:145-149
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Venturini J.,Hernandez M.,Kerrien G.,Laviron C.,Camel D.,Santailler J.L.,Sarnet T.,Boulmer J.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference13 articles.

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4. Flash lamp annealing with millisecond pulses for ultra-shallow boron profiles in silicon

5. Boron redistribution in a shallow δ‐doped Si structure after solid phase epitaxial growth

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