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Evaluation of subsurface damage inherent to polished GaN substrates using depth-resolved cathodoluminescence spectroscopy

  • Published:2018-08 Issue: Volume:660 Page:516-520
  • ISSN:0040-6090
  • Container-title:Thin Solid Films
  • language:en
  • Short-container-title:Thin Solid Films

Author:

Lee Jinhyung,Kim Jong Cheol,Kim JongsikORCID,Singh Rajiv K.,Arjunan Arul C.,Lee HaigunORCID

Funder

National Science Foundation

U.S. Department of Energy

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference24 articles.

1. Wide-bandgap semiconductor materials: for their full bloom;Fujita;Jpn. J. Appl. Phys.,2015

2. Substrates for gallium nitride epitaxy;Liu;Mater. Sci. Eng. R,2002

3. GaN substrates for III-nitride devices;Paskova;Proc. IEEE,2010

4. Challenges and future perspectives in HVPE-GaN growth on ammonothermal GaN seeds;Bockowski;Semicond. Sci. Technol.,2016

5. Chemical and physical mechanisms of CMP of gallium nitride;Aida;Adv. Chem. Mech. Planarization (CMP),2016

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1. Understanding the machining mechanism in ultrasonic vibration-assisted nanogrinding of GaN;Materials Science in Semiconductor Processing;2025-01

2. Subsurface damage in sapphire ultra-precision grinding;Journal of Manufacturing Processes;2024-11

3. Analysis of Subsurface Damage Structures of Gallium Nitride Substrates Induced by Mechanical Polishing with Diamond Abrasives;physica status solidi (b);2024-07-04

4. Features of the Cluster-Ion Treatment of the Surface of a KGd(WO4)2:Nd Single Crystal;Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques;2024-04

5. Features of cluster ion treatment of the surface of KGd(WO<sub>4</sub>)<sub>2</sub>:Nd single crystal;Поверхность. Рентгеновские, синхротронные и нейтронные исследования;2024-03-15
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