Extended endurance performance and reduced threshold voltage by doping Si in GeSe-based ovonic threshold switching selectors

Author:

Li Xiaodan,Yuan ZhenhuiORCID,Lv Shilong,Song Sannian,Song Zhitang

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

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5. Intel 3D XPoint memory die removed from Intel Optane™ PCM (phase change memory);Choe,2017

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