Postoxidation thermal annealing effects of liquid phase deposited TiO2 on (NH4)2Sx-treated AlGaAs-Reference-Cited by-同舟云学术

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Postoxidation thermal annealing effects of liquid phase deposited TiO2 on (NH4)2Sx-treated AlGaAs

Published:2014-07 Issue: Volume:563 Page:40-43
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Hu Chih-Chun,Lee Tai-Lung,Zou Yong-Jie,Lee Kuan-Wei,Wang Yeong-Her

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference17 articles.

1. The effect of phosphorous and sulfur treatment on the surface properties of InP;Lyer;J. Vac. Sci. Technol. B,1988

2. Vapor deposition of TiO2;Yokozawa;Jpn. J. Appl. Phys.,1967

3. Influence of substrate on structural properties of TiO2 thin films obtained via MOCVD;Battiston;Thin Solid Films,1994

4. Open air plasma chemical vapor deposition of highly dielectric amorphous TiO2 films;Ha;Appl. Phys. Lett.,1996

5. Characterizations of titanium oxide films prepared by radio frequency magnetron sputtering;Martin;Thin Solid Films,1996

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Reduced Subthreshold Characteristics and Flicker Noise of an AlGaAs/InGaAs PHEMT Using Liquid Phase Deposited TiO2 as a Gate Dielectric;Materials;2016-10-25

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