Effect of absorber surface modification on the optoelectronic properties of Cu2CdGeSe4 solar cells.-Reference-Cited by-同舟云学术

Effect of absorber surface modification on the optoelectronic properties of Cu2CdGeSe4 solar cells.

Published:2020-03 Issue: Volume:697 Page:137822
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Li X.,Pilvet M.,Timmo K.^ORCID,Grossberg M.,Danilson M.,Mikli V.,Kauk-Kuusik M.^ORCID

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference39 articles.

1. Device characteristics of CZTSSe thin-film solar cells with 12.6% efficiency;Wang;Adv. Energy Mater,2014

2. Solar Frontier, Solar frontier achieves world record thin-film solar cell efficiency of 23.35%, (2019). http://www.solar-frontier.com/eng/news/2019/0117_press.html.

3. Detailed balance limit of efficiency of p-n junction solar cells;Shockley;J. Appl. Phys.,1961

4. Beyond 11% Efficient Sulfide Kesterite Cu2ZnxCd1-xSnS4 Solar Cell: Effects of Cadmium alloying;Yan;ACS Energy Lett,2017

5. Cation substitution of solution-processed Cu2ZnSnS4 thin film solar cell with over 9% efficiency;Su;Adv. Energy Mater.,2015

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A first-principles investigation on a new group of diamond-like semiconductors Cu4-II-Ge2-VI7 (II = Zn, Cd and VI = S, Se) as photovoltaic absorbers;Physics Letters A;2024-11

2. Insights from Experiment and Theory on Peculiarities of the Electronic Structure and Optical Properties of the Tl₂HgGeSe₄ Crystal;Inorganic Chemistry;2023-10-04

3. Structural, electronic, and optical properties of Cu2XSnS4 (X = Be, Mg, Ca, Cd, Hg) semiconductors: first-principles calculations;Applied Physics A;2023-07-04

4. Impact of Li and K co-doping on the optoelectronic properties of CZTS monograin powder;Solar Energy Materials and Solar Cells;2023-04

5. Optoelectronic and mechanical properties of the orthogonal and tetragonal Cu₂CdGe(S_xSe_1−x)₄ semiconducting system via first principles methods;Journal of Applied Physics;2022-05-28