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Vacancy behavior in Cu(In1−Ga )Se2 layers grown by a three-stage coevaporation process probed by monoenergetic positron beams

  • Published:2016-03 Issue: Volume:603 Page:418-423
  • ISSN:0040-6090
  • Container-title:Thin Solid Films
  • language:en
  • Short-container-title:Thin Solid Films

Author:

Uedono Akira,Islam Muhammad M.,Sakurai Takeaki,Hugenschmidt Christoph,Egger Werner,Scheer Roland,Krause-Rehberg Reinhard,Akimoto Katsuhiro

Funder

University of Tsukuba-DAAD

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference33 articles.

1. Microstructural study of the CdS/CuGaSe2 interfacial region in CuGaSe2 thin film solar cells;Nadenau;J. Appl. Phys.,1999

2. Thin film deposition methods for CuInSe2 solar cells;Kemell;Crit. Rev. Solid State Mater. Sci.,2005

3. CIGS absorber s and processes;Niki;Prog. Photovolt. Res. Appl.,2010

4. New world record efficiency for Cu(In,Ga)Se2 thin-film solar cells beyond 20%;Jackson;Prog. Photovolt. Res. Appl.,2011

5. Solar cell efficiency tables (version 46);Green;Prog. Photovolt. Res. Appl.,2015

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