Distributed electron cyclotron resonance plasma: A technology for large area deposition of device-quality a-Si:H at very high rate-Reference-Cited by-同舟云学术

Distributed electron cyclotron resonance plasma: A technology for large area deposition of device-quality a-Si:H at very high rate

Published:2008-08 Issue:20 Volume:516 Page:6853-6857
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Leempoel P.,Descamps P.,Kervyn de Meerendré T.,Charliac J.,Roca i Cabarrocas P.,Bulkin P.,Daineka D.,Dao T.H.,Kleider J.P.,Gueunier-Farret M.E.,Longeaud C.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference12 articles.

1. Determination of the EEDF by Langmuir probe diagnostics in a plasma excited at ECR above a multipolar magnetic field

2. Deposition of SiO2 in integrated distributed electron cyclotron resonance microwave reactor

3. Multi-dipolar plasmas for uniform processing: physics, design and performance

4. Plasma enhanced chemical vapor deposition of silicon thin films for large area electronics

5. The effects of RF plasma excitation frequency and doping gas on the deposition of polymorphous silicon thin films

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