Photo detection characteristics of Si/Si1−xGex/Si p-i-n diodes integrated with optical waveguides

Author:

Yamada Atsushi,Sakuraba Masao,Murota Junichi

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Rare Earth Implanted MOS Structures: Advantages and Drawbacks for Optoelectronic Applications;Functional Nanomaterials and Devices for Electronics, Sensors and Energy Harvesting;2014

2. Structural Changes in SiGe/Si Layers Induced by Fast Crystallization;Subsecond Annealing of Advanced Materials;2014

3. Crystalline Ge1−x Sn x Heterostructures in Lateral High-Speed Devices;Automation, Communication and Cybernetics in Science and Engineering 2009/2010;2010-12-24

4. Crystalline Ge1-xSnx Heterostructures in Lateral High-Speed Devices;2010 Fourth International Conference on Quantum, Nano and Micro Technologies;2010-02

5. Rare-Earth Implanted MOS Devices for Silicon Photonics;Springer Series in Materials Science;2010

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