Effects of the growth temperature on structural and electrical properties of AlN/GaN heterostructures grown by metal organic chemical vapor deposition-Reference-Cited by-同舟云学术

Effects of the growth temperature on structural and electrical properties of AlN/GaN heterostructures grown by metal organic chemical vapor deposition

Published:2020-09 Issue: Volume:709 Page:138228
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Zheng Xia-Xi^ORCID,Lin Chun-Hsiung,Ueda Daisuke,Chang Edward-Yi^ORCID

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

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4. Short-channel effects in AlGAN/GaN HEMTs;Breitschädel;Materials Science and Engineering: B,2001

5. Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors;Ibbetson;Appl. Phys. Lett.,2000

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