Reduction of surface recombination velocity by rapid thermal annealing of p-Si passivated by catalytic-chemical vapor deposited alumina films-Reference-Cited by-同舟云学术

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Reduction of surface recombination velocity by rapid thermal annealing of p-Si passivated by catalytic-chemical vapor deposited alumina films

Published:2015-01 Issue: Volume:575 Page:56-59
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Ogita Yoh-Ichiro,Tachihara Masayuki

Funder

Japan Advanced Institute of Science and Technology

Japan Science and Technology Agency — Core Research for Evolutional Science and TechnologyJapan Science and Technology Agency — Core Research for Evolutional Science and Technology (JST-CREST)

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference20 articles.

1. Recent developments in rear-surface passivation at Fraunhofer ISE

2. Surface passivation of crystalline silicon solar cells: a review

3. Physical and electrical properties of noncrystalline Al2O3 prepared by remote plasma enhanced chemical vapor deposition

4. Low‐Temperature Surface Passivation of Silicon for Solar Cells

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. On the Problem of Determining the Bulk Lifetime by Photoconductivity Decay on the Unpassivated Samples of Monocrystalline Silicon;Russian Microelectronics;2017-12

2. Ultra-Low Reflective Silicon Surfaces for Photovoltaic Applications;Procedia Engineering;2016

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