Optical and electrical properties of p-type AgInSnxS2−x (x=0–0.04) thin films prepared by spray pyrolysis-Reference-Cited by-同舟云学术

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Optical and electrical properties of p-type AgInSnxS2−x (x=0–0.04) thin films prepared by spray pyrolysis

Published:2005-11 Issue:2 Volume:490 Page:168-172
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Albor-Aguilera M.L.,Cayente-Romero J.J.,Peza-Tapia J.M.,De León-Gutiérrez L.R.,Ortega-López M.

Publisher

Elsevier BV

Reference12 articles.

1. Ternary Chalcopyrite Semiconductors: Growth, Electronic Properties and Applications;Shay,1975

2. Proc. 26th Photovoltaic Specialists Conf.;Birkmire,1997

3. Energy bands of AgInS2in the chalcopyrite and orthorhombic structures

4. 13th IEEE PVSC;Loferski,1978

5. A criterion for Applying Chalcopyrite Semiconductors to Optical Line Elimination Filters

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1. Tuning the opto-electrical properties of AgInS 2 films prepared by two- step process;Surfaces and Interfaces;2018-03

2. Structural and Photoelectrochemical Evaluation of Nanotextured Sn-Doped AgInS2Films Prepared by Spray Pyrolysis;ChemSusChem;2012-12-23

3. Influence of gallium on the growth and photoelectrochemical performances of AgIn5S8 photoelectrodes;Thin Solid Films;2012-12

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