Liquid-phase electroepitaxial growth of low band-gap p-InAsPSb/n-InAs and p-InAsP/n-InAs diode heterostructures for thermo-photovoltaic application

Author:

Gevorkyan V.A.,Aroutiounian V.M.,Gambaryan K.M.,Kazaryan M.S.,Touryan K.J.,Wanlass M.W.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference10 articles.

1. I.B. Bhat, in: Proceedings of the International School on Crystal Growth of Materials for Energy Production and Energy-saving Application, ICTP, Trieste, Italy, 5–10 March 2001, p. 133

2. T. Coutts, J. Benner, C. Allman, in: AIP Conference Proceedings, 4th NREL Conference on Thermophotovoltaic Generation of Electricity, 1999, p. 460

3. GaxIn1−xAs thermophotovoltaic converters

4. G.D. Cody, in: T.J. Couts, J.P. Benner, C.S. Alman (Eds.), AIP Conference Proceedings, Thermophotovoltaic Generation of Electricity, Fourth NREL Conference, vol. 450, 1998, pp. 58–67

5. K.M. Gambaryan, V.A. Gevorkyan, V.M. Aroutiounian, In: Sayigh A.A.M. (Ed), Renewable Energy. Renewables: The Energy for the 21st Century, 2000, Part III, p. 1990

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