Improvement of μc-Si:H n–i–p cell efficiency with an i-layer made by hot-wire CVD by reverse H2-profiling-Reference-Cited by-同舟云学术

Improvement of μc-Si:H n–i–p cell efficiency with an i-layer made by hot-wire CVD by reverse H2-profiling

Published:2008-01 Issue:5 Volume:516 Page:755-757
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Li H.,Franken R.H.,Stolk R.L.,van der Werf C.H.M.,Rath J.K.,Schropp R.E.I.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference13 articles.

1. Direct visual observation of powder dynamics in rf plasma‐assisted deposition

2. Hot-wire chemical vapor-deposited microcrystalline silicon in single and tandem n–i–p solar cells

3. Optimization of n–i–p protocrystalline SiGe:H thin film solar cells for application in thin film multijunction solar cells

4. R.H. Franken, C.H.M. van der Werf, J.K. Rath, R.E.I. Schropp, 21st European Photovoltaic Solar Energy Conference and Exhibition, Dresden, Germany, September 4–9, 2006, 3AO.8.4.

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