Modified polycrystalline silicon chemical-vapor deposition process for improving roughness at oxide/polycrystalline silicon interface-Reference-Cited by-同舟云学术

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Modified polycrystalline silicon chemical-vapor deposition process for improving roughness at oxide/polycrystalline silicon interface

Published:2005-01 Issue:1-2 Volume:472 Page:164-168
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Chang J.J.,Hsieh T.E.,Wang Y.L.,Tseng W.T.,Liu C.P.,Lan C.Y.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference21 articles.

1. Structure and Stability of Low Pressure Chemically Vapor‐Deposited Silicon Films

2. Phosphorus Doped Polysilicon for Double Poly Structures: I . Morphology and Microstructure

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Evolution of surface morphology during the growth of amorphous and polycrystalline silicon films;Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques;2017-09

2. Mechanisms of Surface Evolution during the Growth of Undoped Nanosilicon Films;Ukrainian Journal of Physics;2015-02

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