Ferroelectric properties of lanthanum-doped bismuth titanate thin films grown by a sol–gel method-Reference-Cited by-同舟云学术

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Ferroelectric properties of lanthanum-doped bismuth titanate thin films grown by a sol–gel method

Published:2005-01 Issue:1-2 Volume:472 Page:90-95
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Bae Ji Cheul,Kim Sang Su,Choi Eun Kyung,Song Tae Kwon,Kim Won-Jeong,Lee Yong-Ill

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference12 articles.

1. Lanthanum-substituted bismuth titanate for use in non-volatile memories

2. X-ray photoelectron spectroscopy and high resolution electron microscopy studies of Aurivillius compounds: Bi4−xLaxTi3O12(x=0, 0.5, 0.75, 1.0, 1.5, and 2.0)

3. Ferroelectric properties of Bi3.25La0.75Ti3O12 thin films prepared by chemical solution deposition

4. Crystal and electronic structures of Bi4−xLaxTi3O12 ferroelectric materials

5. Anisotropic ferroelectric properties of epitaxially twinned Bi3.25La0.75Ti3O12 thin films grown with three different orientations

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