Molecular-beam epitaxial growth of tensile-strained and n-doped Ge/Si(001) films using a GaP decomposition source-Reference-Cited by-同舟云学术

Molecular-beam epitaxial growth of tensile-strained and n-doped Ge/Si(001) films using a GaP decomposition source

Published:2014-04 Issue: Volume:557 Page:70-75
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Luong T.K.P.,Ghrib A.,Dau M.T.^ORCID,Zrir M.A.,Stoffel M.,Le Thanh V.,Daineche R.,Le T.G.^ORCID,Heresanu V.,Abbes O.,Petit M.,El Kurdi M.,Boucaud P.,Rinnert H.,Murota J.

Funder

French ANR Program

GRAAL

JSPS Core-to-Core Program, Advanced Research Networks “International Collaborative Research Center on Atomically Controlled Processing for Ultralarge Scale Integration”

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference27 articles.

1. Tensile-strained, n-type Ge as a gain medium for monolithic laser integration on Si

2. Ge-on-Si laser operating at room temperature

3. Ge-on-Si optoelectronics

4. Germanium for silicon photonics

5. Direct band gap luminescence from Ge on Si pin diodes

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