High energy Urbach characteristic observed for gallium nitride amorphous surface oxide-Reference-Cited by-同舟云学术

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High energy Urbach characteristic observed for gallium nitride amorphous surface oxide

Published:2006-02 Issue:2 Volume:496 Page:342-345
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Chen P.P.-T.,Butcher K.S.A.,Goldys E.M.,Tansley T.L.,Prince K.E.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference11 articles.

1. GaN: Processing, defects, and devices

2. Optical evidence of intrinsic quantum wells in the transparent conducting oxide β-Ga2O3

3. UV Moderation of Nitride Films during Remote Plasma Enhanced Chemical Vapour Deposition

4. A new secondary ion mass spectrometry technique for III‐V semiconductor compounds using the molecular ions CsM+

5. Growth and applications of Group III-nitrides

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1. Understanding the structure, bonding and reactions of nanocrystalline semiconductors: a novel high-resolution instrumental method of solid-state synchronous luminescence spectroscopy;Physical Chemistry Chemical Physics;2021

2. Investigation in morphology and optical properties of electron beam gun evaporated nanostructured Bromoindium phthalocyanine thin films;Physica B: Condensed Matter;2014-01

3. p-f hybridization in the ferromagnetic semiconductor HoN;Applied Physics Letters;2012-02-13

4. Structure and properties of plasma sprayed BaTiO3 coatings: Spray parameters versus structure and photocatalytic activity;Ceramics International;2011-09

5. Effects of crystallinity and chemical variation on apparent band-gap shift in polycrystalline indium nitride;Thin Solid Films;2011-01

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