Surfactant and impurity properties of antimony on GaAs and GaAs1−xNx on GaAs [100] by solid source molecular beam epitaxy-Reference-Cited by-同舟云学术

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Surfactant and impurity properties of antimony on GaAs and GaAs1−xNx on GaAs [100] by solid source molecular beam epitaxy

Published:2005-09 Issue:1-2 Volume:488 Page:56-61
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Cheah W.K.,Fan W.J.,Yoon S.F.,Tan K.H.,Liu R.,Wee A.T.S.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference27 articles.

1. Influence of Sb, Bi, Tl, and B on the incorporation of N in GaAs

2. The addition of Sb as a surfactant to GaN growth by metal organic vapor phase epitaxy

3. RHEED-AES observation of Sb surface segregation during Sb-mediated Si MBE on Si(001)

4. Atomic structure of surfactant monolayers and its role in epitaxial growth

5. Red Shift of Photoluminescence and Absorption in Dilute GaAsN Alloy Layers

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1. Nitrogen mapping from ADF imaging analysis in quaternary dilute nitride superlattices;Applied Surface Science;2019-05

2. Type-II GaAsSb/GaAsN superlattice solar cells;Physics, Simulation, and Photonic Engineering of Photovoltaic Devices VII;2018-02-16

3. Strain-balanced type-II superlattices for efficient multi-junction solar cells;Scientific Reports;2017-06-21

4. Sb and N Incorporation Interplay in GaAsSbN/GaAs Epilayers near Lattice-Matching Condition for 1.0–1.16-eV Photonic Applications;Nanoscale Research Letters;2017-05-18

5. Structural differences between capped GaSb nanostructures grown by Stranski-Krastanov and droplet epitaxy growth modes;Journal of Applied Physics;2017-01-21

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