Linear and nonlinear optical properties of semi-elliptical InAs quantum dots: Effects of wetting layer thickness and electric field

Author:

Alaydin B.O.ORCID,Altun D.,Ozturk E.

Funder

Sivas Cumhuriyet Üniversitesi

Türkiye Bilimsel ve Teknolojik Araştirma Kurumu

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference27 articles.

1. High average output power from a backside-cooled 2-μm InGaSb VECSEL with full gain characterization;Gaulke;Opt. Express,2021

2. Effects of GaN/AlGaN/Sputtered AlN nucleation layers on the performance of GaN-based ultraviolet light-emitting diodes;Hu;Sci. Rep.,2017

3. Fast and sensitive colloidal quantum dot mid-wave infrared photodetectors;Ackerman;ACS Nano,2018

4. Full optical SESAM characterization methods in the 1.9 to 3-μm wavelength regime;Heidrich;Opt. Express,2021

5. Effect of high bandgap AlAs quantum barrier on electronic and optical properties of In0.70Ga0.30As/Al0.60In0.40As superlattice under applied electric field for laser and detector applications;Alaydin;Int. J. Mod. Phys. B,2020

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