The effect of ratio of deposition times and via density on via fill in aluminum multilayer metallization-Reference-Cited by-同舟云学术

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The effect of ratio of deposition times and via density on via fill in aluminum multilayer metallization

Published:2003-11 Issue:1-2 Volume:444 Page:132-137
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Deshmukh Abhay Ramrao

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference7 articles.

1. W. Robi, J. Forster, M. Frank, H. Cerva, A. Rucki, Conference Proceedings ULSI XIII Materials Research Society, (1998), p. 251

2. B. Zhao, M.A. Biberger, V. Hoffman, S.Q. Wang, P.K. Vasudev, T.E. Seidel, IEEE (1996) IEDM p. 353

3. Submicron Via-Hole Filling using Al Low-Pressure Seed Process

4. A low temperature integrated aluminum metallization technology for ULSI devices

5. G. Yao, P. Ding, H. Wang, C. Cha, S. Lai, M. Aburi, Z. Xu, Conference Proceedings ULSI XIII Materials Research Society, (1998), p. 243

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