Minority carrier traps in Cu(In,Ga)(S,Se)2 solar cells-Reference-Cited by-同舟云学术

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Minority carrier traps in Cu(In,Ga)(S,Se)2 solar cells

Published:2015-03 Issue: Volume:578 Page:98-102
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Choi In-Hwan

Funder

Ministry of Trade, Industry and Energy (MOTIE)

Korea Institute for Advancement of Technology (KIAT)

DaeGyeong Institute for Regional Program Evaluation (DGIRPE)

Chung-Ang University

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. New world record efficiency for Cu(In, Ga)Se2 thin-film solar cells beyond 20%;Jackson;Prog. Photovolt. Res. Appl.,2011

2. Distinction between bulk and interface states in CuInSe2/CdS/ZnO by space charge spectroscopy;Herberholz;J. Appl. Phys.,1998

3. Compensating donors in Cu(In, Ga)Se2 absorbers of solar cells;Igalson;Thin Solid Films,2005

4. Admittance spectroscopy of cadmium free CIGS solar cells heterointerfaces;Djebbour;Thin Solid Films,2006

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Defect distributions in Cu(In,Ga)(S,Se)2 solar cells with three different buffer layers;Current Applied Physics;2016-03

2. Structural and Optical Properties of Zn-Based II–VI Semiconductor Thin Films Deposited by MOCVD;Journal of Nanoelectronics and Optoelectronics;2015-06-01

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