Epitaxial growth of high-κ oxides on silicon-Reference-Cited by-同舟云学术

Epitaxial growth of high-κ oxides on silicon

Published:2008-11 Issue:1 Volume:517 Page:197-200
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Merckling C.,Saint-Girons G.,Delhaye G.,Patriarche G.,Largeau L.,Favre-Nicollin V.,El-Kazzi M.,Regreny P.,Vilquin B.,Marty O.,Botella C.,Gendry M.,Grenet G.,Robach Y.,Hollinger G.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference17 articles.

1. Crystalline Oxides on Silicon: The First Five Monolayers

2. Atomic and electronic structure of theSi/SrTiO3interface

3. Two-dimensional growth of high-quality strontium titanate thin films on Si

4. Phase of reflection high-energy electron diffraction oscillations during (Ba,Sr)O epitaxy on Si(100): A marker of Sr barrier integrity

5. Interface structure and thermal stability of epitaxial SrTiO3 thin films on Si (001)

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