The growth of GaN films by alternate source gas supply hot-mesh CVD method-Reference-Cited by-同舟云学术

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The growth of GaN films by alternate source gas supply hot-mesh CVD method

Published:2009-04 Issue:12 Volume:517 Page:3528-3531
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Komae Yasuaki,Saitou Takeshi,Suemitsu Maki,Ito Takashi,Endoh Tetsuo,Nakazawa Hideki,Narita Yuzuru,Takata Masasuke,Akahane Tadashi,Yasui Kanji

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference13 articles.

1. High-Power, Long-Lifetime InGaN/GaN/AlGaN-Based Laser Diodes Grown on Pure GaN Substrates

2. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer

3. Effects of total gas velocity during growth of undoped GaN epitaxial layer on sapphire (0001) substrate by horizontal MOCVD

4. Hot-mesh CVD for growth of GaN films on (100) GaAs

5. Thermal stability of GaN on (111) Si substrate

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Mechanism of SiC formation by Si surface carbonization using CO gas;Applied Surface Science;2024-07

2. Catalytic decomposition of NH3 on heated Ru and W surfaces;Thin Solid Films;2011-05

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