Ga-doped ZnO films magnetron sputtered at ultralow discharge voltages: Significance of controlling defect generation-Reference-Cited by-同舟云学术

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Ga-doped ZnO films magnetron sputtered at ultralow discharge voltages: Significance of controlling defect generation

Published:2018-08 Issue: Volume:660 Page:840-845
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Chen Yuyun,Meng Fanping,Ge Fangfang,Xu Genbao,Huang Feng

Funder

National Key R&D Plan

Zhejiang Key Research and Development Program

Zhejiang Postdoctoral Preferential Foundation

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference28 articles.

1. Criteria for choosing transparent conductors;Gordon;MRS Bull.,2000

2. Transparent conducting oxide semiconductors for transparent electrodes;Minami;Semicond. Sci. Technol.,2005

3. Properties of Ga-doped ZnO films;Miyazaki;J. Non-Cryst. Solids,1997

4. Group III impurity doped zinc oxide thin films prepared by RF magnetron sputtering;Minami;Jpn. J. Appl. Phys.,1985

5. Optical and electrical properties of Ga2O3-doped ZnO films prepared by R.F. sputtering;Choi;Thin Solid Films,1990

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4. Effects of laser pulse energy on the structural, optical and electrical properties of pulsed laser deposited Ga-doped ZnO thin films;Journal of Materials Science: Materials in Electronics;2019-06-12

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