Degradation of a tantalum filament during the hot-wire CVD of silicon nitride thin films-Reference-Cited by-同舟云学术

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Degradation of a tantalum filament during the hot-wire CVD of silicon nitride thin films

Published:2015-01 Issue: Volume:575 Page:42-46
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Oliphant C.J.,Arendse C.J.,Muller T.F.G.,Jordaan W.A.,Knoesen D.

Funder

National Research Foundation

National Metrology Institute of South Africa

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference15 articles.

1. Frontiers in HWCVD

2. Deposition of device quality silicon nitride with ultra high deposition rate (>7 nm/s) using hot-wire CVD

3. Extension of the lifetime of tantalum filaments in the hot-wire (Cat) Chemical Vapor Deposition process

4. Characterization of silicon nitride thin films deposited by hot-wire CVD at low gas flow rates

5. ICDD card numbers: Ta (04-008-3222), Ta3Si (04-005-5965), Ta2Si (04-004-7298), α-Ta5Si3 (04-004-7245), metastableTa5Si3 (04-004-7297);Ta2N (04-003-4166), TaN (04-015-1263), and β-Si3N4 (04-013-1344),2012

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