GaN nanowires—influence of the starting material on nanowire growth-Reference-Cited by-同舟云学术

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GaN nanowires—influence of the starting material on nanowire growth

Published:2007-12 Issue:2-4 Volume:516 Page:238-242
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Djurišić A.B.,Tam K.H.,Hsu Y.F.,Zhang S.L.,Xie M.H.,Chan W.K.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference20 articles.

1. Gallium Nitride Nanowire Nanodevices

2. Metalorganic Chemical Vapor Deposition Route to GaN Nanowires with Triangular Cross Sections

3. Control of growth orientation of GaN nanowires

4. Nanocrystalline Ga1−xMnxN films grown by reactive sputtering

5. GaN nanowires: CVD synthesis and properties

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