Effect of the oxidation of aluminum bottom electrode in a functionalized-carbon nanotube based organic rewritable memory device-Reference-Cited by-同舟云学术

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Effect of the oxidation of aluminum bottom electrode in a functionalized-carbon nanotube based organic rewritable memory device

Published:2016-11 Issue: Volume:619 Page:10-16
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Rosales-Gallegos I.A.,Avila-Niño J.A.,Reyes-Reyes M.,Núñez-Olvera O.,López-Sandoval R.

Funder

SEP-PROMEP

CONACYT

Fondo Sectorial-CONACYT-SENER-Hidrocarburos

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference46 articles.

1. Programmable polymer thin film and non-volatile memory device;Ouyang;Nature,2004

2. Polymer and organic nonvolatile memory devices;Heremans;Chem. Mater.,2011

3. Recent progress in resistive random access memories: materials, switching mechanisms, and performance;Pan;Mater. Sci. Eng. R,2014

4. Carrier transport and memory mechanisms of multilevel resistive memory devices with an intermediate state based on double-stacked organic/inorganic nanocomposites;Ma;Org. Electron.,2016

5. New conduction and reversible memory phenomena in thin insulating films;Simmons;Proc. Roy. Soc.,1967

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3. ITO/polymer/Al from diode-like to memory device: electroforming, multilevel resistive switching, and quantum point contact;Journal of Materials Science: Materials in Electronics;2024-01

4. Enhancing Phase and Morphology Control of Vanadium Oxide Films for Resistive Memory Applications: A Water-Assisted Chemical Approach;2024

5. Modifying the native aluminum oxide layer by simple methods for fabricating write-once-read-many memory devices;Journal of Materials Science: Materials in Electronics;2023-05

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