Formation of NiSi2/SiN compound nanocrystal for nonvolatile memory application-Reference-Cited by-同舟云学术

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Formation of NiSi2/SiN compound nanocrystal for nonvolatile memory application

Published:2010-10 Issue:24 Volume:518 Page:7324-7327
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Chen Yu-Ting,Chang Ting-Chang,Lu Jin,Huang Jheng-Jie,Yang Po-Chun,Chen Shih-Ching,Chu Ann-Kuo,Huang Hui-Chun,Gan Der-Shin,Ho New-Jin,Shi Yi

Funder

National Science Council

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference18 articles.

1. Introduction to flash memory

2. Nanocrystal nonvolatile memory devices

3. Proceedings of 13th IPFA;Lu,2006

4. Effects of traps on charge storage characteristics in metal-oxide-semiconductor memory structures based on silicon nanocrystals

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Phase separation within NiSiN coatings during reactive HiPIMS discharges: A new pathway to grow NixSi nanocrystals composites at low temperature;Applied Surface Science;2018-10

2. Robust Data Retention and Superior Endurance of Silicon–Oxide–Nitride–Oxide–Silicon-Type Nonvolatile Memory with NH$_{3}$-Plasma-Treated and Pd-Nanocrystal-Embedded Charge Storage Layer;Japanese Journal of Applied Physics;2012-04-20

3. Robust Data Retention and Superior Endurance of Silicon–Oxide–Nitride–Oxide–Silicon-Type Nonvolatile Memory with NH3-Plasma-Treated and Pd-Nanocrystal-Embedded Charge Storage Layer;Japanese Journal of Applied Physics;2012-04-01

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