Fabrication and characterization of a trilayer germanium nanocrystal memory device with hafnium dioxide as the tunnel dielectric-Reference-Cited by-同舟云学术

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Fabrication and characterization of a trilayer germanium nanocrystal memory device with hafnium dioxide as the tunnel dielectric

Published:2004-09 Issue: Volume:462-463 Page:46-50
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Ng T.H.,Ho V.,Teo L.W.,Tay M.S.,Koh B.H.,Chim W.K.,Choi W.K.,Du A.Y.,Tung C.H.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference10 articles.

1. Fast and long retention-time nano-crystal memory

2. Single charge and confinement effects in nano‐crystal memories

3. Effects of traps on charge storage characteristics in metal-oxide-semiconductor memory structures based on silicon nanocrystals

4. Nanocrystal metal-oxide-semiconductor memories obtained by chemical vapor deposition of Si nanocrystals

5. Charging effects in silicon nanocrystals within SiO2 layers, fabricated by chemical vapor deposition, oxidation, and annealing

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