Correlation between resistivity and oxygen vacancy of hydrogen-doped indium tin oxide thin films-Reference-Cited by-同舟云学术

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Correlation between resistivity and oxygen vacancy of hydrogen-doped indium tin oxide thin films

Published:2011-03 Issue:11 Volume:519 Page:3557-3561
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Okada Koichi,Kohiki Shigemi,Luo Suning,Sekiba Daiichiro,Ishii Satoshi,Mitome Masanori,Kohno Atsushi,Tajiri Takayuki,Shoji Fumiya

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference23 articles.

1. Hydrogen-doped In2O3as High-mobility Transparent Conductive Oxide

2. Shallow donor state of hydrogen inIn2O3andSnO2: Implications for conductivity in transparent conducting oxides

3. Dopability, Intrinsic Conductivity, and Nonstoichiometry of Transparent Conducting Oxides

4. Hydrogen doping in indium oxide: Anab initiostudy

5. Transparent and conducting ITO films: new developments and applications

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