Author:
Morikawa Yasuhiro,Koidesawa Tooru,Hayashi Toshio,Suu Koukou
Subject
Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials
Reference13 articles.
1. F. Laemer and A. Schilp, WO94/14187 (DE93/01129, US patent US5501893).
2. Cryogenic etching of deep narrow trenches in silicon
3. Int. Symp. Dry Process, Tokyo;Sakai,2001
4. Int. Symp. Dry Process, Tokyo;Hashimoto,2004
5. Monte Carlo simulation method for etching of deep trenches in Si by a SF6/O2 plasma mixture
Cited by
14 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献