Effects of pre-annealing conditions on the characteristics of ZnO nanorods and ZnO/p-Si heterojunction diodes grown through hydrothermal method
Author:
Funder
National Science Council
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials
Reference19 articles.
1. Electrical and ultraviolet photoresponse properties of quasialigned ZnO nanowires/p-Si heterojunction
2. p-ZnO∕n-Si heterojunction: Sol-gel fabrication, photoresponse properties, and transport mechanism
3. Electroluminescent and transport mechanisms of n-ZnO∕p-Si heterojunctions
4. Electroluminescence from ZnO nanorods with an n-ZnO/p-Si heterojunction structure
5. Controlled c-oriented ZnO nanorod arrays and m-plane ZnO thin film growth on Si substrate by a hydrothermal method
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1. Deep-level transient spectroscopy analysis of interface defects in Ce:ZnO/p-Si heterostructures;Journal of Materials Science: Materials in Electronics;2024-06
2. Performance enhanced Metal‐Semiconductor‐Metal photodetector based on double‐layer ZnO nanorods;Electronics Letters;2021-11-06
3. Effect of Annealing Atmosphere on the Diode Behaviour of ZnO/Si Heterojunction;Elektronika ir Elektrotechnika;2021-08-17
4. Effect of annealing temperature on the interface state density of n-ZnO nanorod/p-Si heterojunction diodes;Open Physics;2021-01-01
5. P-NiO/n-ZnO heterojunction photodiodes with an MgZnO/ZnO quantum well insertion layer;Materials Science in Semiconductor Processing;2020-01
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