Improvement in light output intensity of InGaN/GaN multiple-quantum-well blue light-emitting diode by SiO2/Si3N4 distributed Bragg reflectors and silver back mirror
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials
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2. Investigation of TiO2–Al2O3 bi-layer films as Bragg reflector of blue light by using electron beam evaporation;Microsystem Technologies;2017-07-29
3. The Influences of Annealing Temperatures on the Properties of HfO2 Thin Film and the Fabrication of SiO2/HfO2 Distributed Bragg Reflector;Advanced Materials Research;2015-04
4. Improved efficiency of InGaN/GaN light-emitting diodes with Al-doped zinc oxide using dual-plasma-enhanced metal-organic chemical vapour deposition system;International Journal of Nanotechnology;2014
5. Recent development of gallium oxide thin film on GaN;Materials Science in Semiconductor Processing;2013-10
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