A study on dry etching for profile and selectivity of ZrO2 thin films over Si by using high density plasma-Reference-Cited by-同舟云学术

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A study on dry etching for profile and selectivity of ZrO2 thin films over Si by using high density plasma

Published:2009-05 Issue:14 Volume:517 Page:4246-4250
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Woo Jong-Chang,Kim Sang-Gi,Koo Jin-Gun,Kim Gwan-Ha,Kim Dong-Pyo,Yu Chong-Hee,Kang Jin-Yeong,Kim Chang-IL

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference17 articles.

1. Characterization of Thermal and Electrical Stability of MOCVD HfO[sub 2]-HfSiO[sub 4] Dielectric Layers with Polysilicon Electrodes for Advanced CMOS Technologies

2. Characteristics of HfO[sub 2]/HfSi[sub x]O[sub y] film as an alternative gate dielectric in metal–oxide–semiconductor devices

3. Experimental observations of the thermal stability of high-k gate dielectric materials on silicon

4. CRC Handbook of Chemistry and Physics 3rd Chemical Rubber;Lide,2000

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