Etching characteristics and modeling for oval-shaped contact-Reference-Cited by-同舟云学术

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Etching characteristics and modeling for oval-shaped contact

Published:2007-04 Issue:12 Volume:515 Page:4923-4927
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Park Sung-Chan,Lim Seok-Hyun,Shin Chul-Ho,Min Gyung-Jin,Kang Chang-Jin,Cho Han-Ku,Moon Joo-Tae

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference5 articles.

1. Structural Effects on a Submicron Trench Process

2. Etched Shape Control of Single‐Crystal Silicon in Reactive Ion Etching Using Chlorine

3. Redeposition during Deep Trench Etching

4. Profile control of high aspect ratio trenches of silicon. II. Study of the mechanisms responsible for local bowing formation and elimination of this effect

5. Process characterization for tapered contact etch

Cited by 18 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Specialized design for three basic mask patterns counteract charging effects during plasma etching;Physics of Plasmas;2024-02-01

2. EFFECTS OF EDGE ROUGHNESS ON SURFACE CHARGING IN PLASMA ETCHING;Surface Review and Letters;2023-08-26

3. Charging Issues on the Rectangle Mask Line During Plasma Etching with Consideration of Electron-Solid Interaction;Brazilian Journal of Physics;2023-07-11

4. The Influence of Secondary Electron Emission on Surface Charging on a Mask Trench in Plasma Etching;Moscow University Physics Bulletin;2022-12

5. The features of surface charging on rectangle mask holes in plasma etching;Physics of Plasmas;2022-10

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