Suppression of 193-nm photoresist deformation by H2 addition to fluorocarbon plasma in via-hole etching-Reference-Cited by-同舟云学术

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Suppression of 193-nm photoresist deformation by H2 addition to fluorocarbon plasma in via-hole etching

Published:2007-04 Issue:12 Volume:515 Page:5012-5018
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Yonekura Kazumasa,Yoshikawa Kazunori,Fujiwara Yuji,Sakamori Shigenori,Fujiwara Nobuo,Kosaka Takayoshi,Ohkuni Mitsuhiro,Tateiwa Kenji

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference26 articles.

1. Investigation of ash damage to ultralow-k inorganic materials

2. Low-Damage Damascene Patterning Using Porous Inorganic Low-Dielectric-Constant Materials

3. Proc. Int. Interconnect Technology Conference;Tatsumi,2003

4. Prevention of Cu degradation using in situ N[sub 2] plasma treatment in a dual-damascene process

5. Etching of xerogel in high-density fluorocarbon plasmas

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Surface roughening of photoresist after change of the photon/radical and ion treatment sequence;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2017-11

2. 2-Colour photolithography;Physical Chemistry Chemical Physics;2014

3. Surface Modification of Poly(methyl methacrylate) by Hydrogen-Plasma Exposure and Its Sputtering Characteristics by Ultraviolet Light Irradiation;Japanese Journal of Applied Physics;2013-09-01

4. Hydrogen Plasma Exposure of Polymethylmethacrylate and Etching by Low Energy Ar+ Ion Beam;Journal of the Vacuum Society of Japan;2013

5. Systematic studies on reactive ion etch-induced deformations of organic underlayers;SPIE Proceedings;2011-03-17

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