Author:
Chen C.W.,Chang T.C.,Liu P.T.,Tsai T.M.,Huang H.C.,Chen J.M.,Tseng C.H.,Liu C.C.,Tseng T.Y.
Subject
Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials
Reference12 articles.
1. Closed-form expressions for interconnection delay, coupling and crosstalk in VLSI's;Sakurai;IEEE Trans. Electron Dev.,1993
2. Metal drift behavior in low dielectric constant organosiloxane polymer;Mallikarjunan;Appl. Phys. Lett.,2001
3. Dielectric barrier for Cu metallization system;Vogt;Mater. Adv. Metallization,1997
4. Low dielectric constant 3MS α-SiC:H as Cu diffusion barrier layer in Cu dual damascene process;Lee;Jpn. J. Appl. Phys.,2001
5. M. Tanaka, S. Saida, T. Lijima, Y. Tsunashima, Low-k SiN films for Cu interconnects integration fabricated by ultra low temperature thermal CVD, Symposium on VLSI Technology Digest of Technical Papers, 1999, pp. 47–48
Cited by
27 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献