Effect of incorporating p-type hydrogenated nanocrystalline silicon buffer layer on amorphous silicon n–i–p solar cell performances
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials
Reference21 articles.
1. Nanostructure, electrical and optical properties of p-type hydrogenated nanocrystalline silicon films
2. Relation between the open-circuit voltage and the band gap of absorber and buffer layers in a-Si:H solar cells
3. Carrier dynamics at surface and interface in hydrogenated amorphous silicon observed by the transient grating method
4. Computer simulation model of the effects of interface states on high‐performance amorphous silicon solar cells
5. Simulation and study of the influence of the buffer intrinsic layer, back-surface field, densities of interface defects, resistivity of p-type silicon substrate and transparent conductive oxide on heterojunction with intrinsic thin-layer (HIT) solar cell
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1. Improvement in a-Si:H silicon solar cells with using double p-type window layers based on nanocrystalline silicon oxide;Optik;2021-10
2. Performances analysis of heterojunction solar cells through integration of hydrogenated nanocrystalline silicon bilayer by using numerical study;Molecular Crystals and Liquid Crystals;2021-06-26
3. Comparison of using p-nc-SiOx:H and p-nc-Si:H as window layer in amorphous silicon based solar cells;Optik;2020-11
4. Controlling performance of a-Si:H solar cell with SnO2:F front electrode by introducing dual p-layers with p-a-SiO :H/p-nc-SiO :H nanostructure;Solar Energy;2018-09
5. Efficiency increase of a-Si:H solar cells with optimized front and back contact textures;Optik;2018-04
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