Ge surface-energy-driven secondary grain growth via two-step annealing-Reference-Cited by-同舟云学术

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Ge surface-energy-driven secondary grain growth via two-step annealing

Published:2014-11 Issue: Volume:571 Page:108-113
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Lee Sangsoo,Son Yong-Hoon,Park Yongjo,Hwang Kihyun,Shin Yoo Gyun,Yoon Euijoon

Funder

Samsung Electronics Co., Ltd.

Ministry of Education, Science and Technology of Korea

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference23 articles.

1. PMOS transistors in LPCVD polycrystalline silicon–germanium films;King;IEEE Electron Device Lett.,1991

2. Polycrystalline silicon–germanium thin-film transistors;King;IEEE Trans. Electron Devices,1994

3. High-performance polycrystalline SiGe thin-film transistors using Al2O3 insulators;Jin;IEEE Electron Device Lett.,1998

4. High mobility Ge-on-insulator p-channel MOSFETs using Pt germanide Schottky source/drain;Maeda;IEEE Electron Device Lett.,2005

5. The electrical properties of polycrystalline silicon films;Seto;J. Appl. Phys.,1975

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Dual-Step Selective Homoepitaxy of Ge with Low Defect Density and Modulated Strain Based on Optimized Ge/Si Virtual Substrate;Materials;2022-05-18

2. Effect of the elastic coefficient heterogeneity and crystallography on the grain growth stagnation;Acta Mechanica;2021-06-03

3. Characterization and mechanism of crystallization of Ge films on silicon substrate with graphite buffer layer;Materials Science in Semiconductor Processing;2018-09

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