Plasma ash processing solutions for advanced interconnect technology-Reference-Cited by-同舟云学术

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Plasma ash processing solutions for advanced interconnect technology

Published:2008-04 Issue:11 Volume:516 Page:3558-3563
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Fuller N.C.M.,Worsley M.A.,Tai L.,Bent S.,Labelle C.,Arnold J.,Dalton T.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. International Technology Roadmap for Semiconductors (ITRS, Santa Clara, CA, 2001).

2. Comparative study of SiOCH low-k films with varied porosity interacting with etching and cleaning plasma

3. Dry ashing process evaluation for porous ULK films

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4. Effect of NH3/N2 ratio in plasma treatment on porous low dielectric constant SiCOH materials;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2014-05

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