Observation and modulation of gas film and plasma behavior in electrolytic plasma hybrid etching of semiconductor material 4H–SiC
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference27 articles.
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1. Image analysis development for optimization of 4H–SiC trench recovery treatment by combination of gas etching and sacrificial oxidation approaches;Materials Science in Semiconductor Processing;2024-05
2. Effects of ultrasonic vibration-assisted machining methods on the surface polishing of silicon carbide;Journal of Materials Science;2024-04-29
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4. Fabrication of Homogeneous Nanoporous Structure on 4H‐/6H‐SiC Wafer Surface via Efficient and Eco‐Friendly Electrolytic Plasma‐Assisted Chemical Etching;Small;2023-01-12
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