Vapor Epitaxy by Surface Photoabsorption Spectroscopy, Evaluations of-Reference-Cited by-同舟云学术

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Vapor Epitaxy by Surface Photoabsorption Spectroscopy, Evaluations of

Published:2001 Issue: Volume: Page:9463-9467
ISSN:
Container-title:Encyclopedia of Materials: Science and Technology
language:
Short-container-title:

Author:

Kobayashi N.

Publisher

Elsevier

Reference10 articles.

1. Reconstructions of GaAs (1¯1¯1¯) surfaces observed by scanning tunneling microscopy;Biegelsen;Phys. Rev. Lett.,1990

2. Band structure and optical properties of gallium;Hunderi;J. Phys. F: Met. Phys.,1974

3. In-situ monitoring and control of surface processes in MOVPE by surface photoabsorption;Kobayashi;J. Cryst. Growth,1994

4. Optical investigation on the growth process of GaAs during migration-enhanced epitaxy;Kobayashi;Jpn. J. Appl. Phys.,1989

5. Pyrolysis of trimethylgallium on (001) GaAs surface investigated by surface photoabsorption;Kobayashi;Jpn. J. Appl. Phys.,1991

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