Integration of Low-k Dielectrics and Copper into Sub-250nm Interconnects-Reference-Cited by-同舟云学术

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Integration of Low-k Dielectrics and Copper into Sub-250nm Interconnects

Published:2001 Issue: Volume: Page:4121-4127
ISSN:
Container-title:Encyclopedia of Materials: Science and Technology
language:
Short-container-title:

Author:

Fowler B.W.,Yu K.C.,Wetzel J.T.

Publisher

Elsevier

Reference16 articles.

1. Suppression of copper diffusion through barrier metal-free hydrogen silsesquioxane dielectrics by NH3 plasma treatment;Chang;Electrochem. Solid-State Lett,1999

2. Effects of slurry formulations on chemical–mechanical polishing of low dielectric constant polysiloxanes: hydrido-organosiloxane and methylsilsesquioxane;Chen;J. Vac. Sci. Technol. B,2000

3. Selective and blanket electroless copper deposition for ultralarge scale integration;Dubin;J. Electrochem. Soc,1997

4. “Copper chip” technology;Edelstein;Proc. SPIE,1998

5. Overview of process integration issues for low-k dielectrics;Havemann,1998

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